Hauv kev lag luam ntawm hluav taws xob hluav taws xob, cov khoom siv nqus tsev, ntim khoom semiconductor, thiab cov khoom siv hluav taws xob tshiab, ceramic - rau - cov cuab yeej siv hlau yog ib qho tseem ceeb rau kev ua tiav cov khoom ntim hermetic thiab kev tswj xyuas kom zoo. Txij li thaum ceramics lawv tus kheej tsis yog solderable, ib tug muaj zog, conductive, thiab brazable hlau zaj duab xis yuav tsum tau tsim nyob rau hauv lawv nto los ntawm ceramic metallization. Raws li cov cuab yeej hloov zuj zus mus rau lub zog ntau dua, ntau zaus, thiab qhov me me, qhov kev xav tau ntau dua tau muab tso rau ntawm qhov sib txuas ntawm lub zog, thermal stability, thiab microscopic uniformity ntawm metallized ceramics, tsav cov evolution tsis tu ncua ntawm metallization txheej txheem los ntawm cov tsoos siab -kub sintering mus rau qis -kub, ib puag ncig, kev kub thiab kev kub ntxhov.
Kev sib piv ntawm Mainstream Metallization Methods
Tam sim no, cov txheej txheem ceramic metallization tau siv dav hauv kev lag luam suav nrog electroless plating, electroplating, nyiaj / npib tsib xee plating, Mo-Mn sintering, thiab nqus txheej tshuab, txhua tus muaj nws tus kheej zoo thiab qhov tsis zoo:
Electroless Ni-P plating yuav tsum tsis muaj lub zog hluav taws xob sab nraud thiab tuaj yeem tsim cov txheej txheem sib xws ntawm cov duab geometric nyuaj. Txawm li cas los xij, txheej zaj duab xis thiab ceramic substrate feem ntau yog lub cev adsorbed, ua rau tsis muaj zog adhesion (feem ntau.<3 MPa). Furthermore, the plating solution is expensive, and the treatment of phosphorus-containing wastewater is difficult, making it difficult to meet high reliability requirements.
Thaum electroplating Ni tuaj yeem ua tiav qis- cov txheej txheem kev ntxhov siab, nws yog qhov tsis tshua muaj siab rau kev huv ntawm cov txheej txheem pretreatment, yooj yim ua rau muaj qhov tsis xws luag xws li blistering thiab pitting. Tsis tas li ntawd, vim muaj kev cuam tshuam ntawm hluav taws xob hauv hluav taws xob, qhov tob lossis qhov zawj hauv qhov precision metallized aluminium ceramic Cheebtsam feem ntau pom cov plating tsis sib xws, uas ua rau cov txheej txheem plating tsis zoo.
Txoj kev Ag(Ni), uas muaj cov txheej txheem slurry ua raws li kev kub siab - txo qis los ua cov txheej hlau, yog qhov yooj yim thiab muaj cov khoom siv zoo. Txawm li cas los xij, Ag txheej yog nquag mus rau ion tsiv teb tsaws nyob rau hauv qhov kub thiab txias, high humidity, thiab DC hluav taws xob teb, ua rau rwb thaiv tsev tsis ua hauj lwm. Thaum Ni txheej muaj kev txav mus los tsawg, cov yeeb yaj kiab feem ntau nyias nyias, tsis tu ncua, thiab tsis muaj peev xwm tiv taus corrosion.
The Mo-Mn sintering method, the most mature process, oxidizes Mn in an H₂-H₂O atmosphere and reacts it with the Al₂O₃ glass phase to form a manganese aluminum spinel transition layer, achieving high-strength bonding (>20 MPa). Txawm li cas los xij, nws yuav tsum tau siab -kub sintering ntawm 1300-1500 degree, ua rau muaj kev siv zog ntau. Tsis tas li ntawd, cov khoom ntxhib ntawm Mo-Mn hmoov ua rau cov zaj duab xis ntxhib thiab tsis sib luag, ua rau nws tsis haum rau siab - precision machining ntawm aluminium ceramic qhov chaw.
Yam tseem ceeb cuam tshuam rau Metallization Zoo
1. Film Material Compatibility: Ib qho zoo tagnrho metallization system yuav tsum sib npaug adhesion, conductivity, thiab weldability. Ni-Cu/Ag cov qauv sib xyaw, vim nws cov gradient CTE, tshuaj lom neeg sib raug zoo, thiab muaj peev xwm los thaiv Ag diffusion, tau dhau los ua cov qauv kev daws teeb meem rau siab - zaus, siab - cov khoom siv fais fab.
2. Zaj duab xis Thickness Optimization: nyias nyias (<0.5 μm) films cannot form a continuous film, resulting in insufficient adhesion; too thick (>3 μm) cov yeeb yaj kiab nce kev ntxhov siab sab hauv thiab txo cov yas. Cov kev sim qhia tau hais tias Ni-Cu txheej hloov mus txog nws qhov siab kawg ntawm qhov sib txuas ntawm 1.0-1.5 μm.
3. Substrate Pretreatment and Cleanliness: Micropores and contaminants on the Al₂O₃ surface significantly weaken adhesion. Standard procedures include ultrasonic cleaning and plasma activation to ensure a surface energy >72 mN / m, muab ib tug huv si thiab nquag substrate rau sputtering.
Daim ntawv thov Scenarios thiab yav tom ntej Trends
Fais fab Electronic Modules: IGBT substrates siv High Purity Alumina Precision Advanced Ceramic Metallization Parts (HAMPs) kom ua tiav cov thermal tsis tshua muaj kev sib txuas los ntawm sputtering metallization.
Nqus Electronic Devices: Metalizating Ceramic Parts in Traveling Wave Tubes (TWTs) thiab Magnetrons yuav tsum muaj siab hermeticity; ntom, tsis yog - ntxeem tau sputtered films yog superior rau porous sintered txheej.
5G RF Devices: Cov nyhuv ntawm daim tawv nqaij tseem ceeb ntawm cov frequencies yuav tsum tsis tshua muaj electrode nto tiv taus, ua rau Ag saum txheej indispensable.
Nyob rau hauv lub neej yav tom ntej, kev lag luam yuav tsom mus rau peb lub ntsiab lus qhia: ua ntej, tsim tshiab gradient composite lub hom phiaj (xws li W-Ni- Fe) kom ntxiv match CTE; thib ob, sib txuas atomic txheej deposition (ALD) kom ua tiav sub-nanometer interface tswj; thiab thib peb, txhawb nqa yob-rau- yob (R2R) sputtering khoom los txo cov nqi tsim khoom ntawm Alumina Metallized Ceramics.
Xaus
Los ntawm Mo-Mn siab-kub sintering rau Ni-Cu/Ag composite sputtering, txhua qhov dhia mus rau hauv siab-Strength Metallized Ceramic Components thev naus laus zis yog los ntawm kev nrhiav kev ua tau zoo dua qub. Nrog rau kev loj hlob sai ntawm dav -bandgap semiconductor li xws li silicon carbide thiab gallium nitride, precision metallized ceramics tsis yog tsuas yog kev sib txuas xov xwm, tab sis cov thev naus laus zis tseem ceeb uas txiav txim siab tag nrho thermal- hluav taws xob- kev ntseeg siab ntawm cov tshuab. Tsuas yog los ntawm kev txhim kho cov khoom siv tsis tu ncua thiab cov txheej txheem cov qhov rais tuaj yeem muaj kev nyab xeeb thiab kev ua neej nyob ntawm cov khoom siv tseem ceeb raug kev tiv thaiv nyob rau hauv huab cua ua haujlwm.
Tiv tauj peb
Yog tias koj xav paub ntau ntxiv txog cov qauv tsim zaj duab xis, hom tsis ua haujlwm raug, lossis sputtering txheej txheem parameter qhov rais ntawmMetallized ceramics rau cov khoom siv hluav taws xob, thov hu rau peb. Peb yuav muab koj cov ntaub ntawv kev tshaj lij thiab kev txhawb nqa engineering rau koj.
